Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

78A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

75W Tc

Turn Off Delay Time  

16 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.35V @ 50μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2009

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

4.8MOhm

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

75W

Case Connection  

DRAIN

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.8m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2139pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

23nC @ 4.5V

Rise Time  

96ns

Vgs (Max)  

±20V

Fall Time (Typ)  

34 ns

Continuous Drain Current (ID)  

92A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

78A

Drain to Source Breakdown Voltage  

30V

Dual Supply Voltage  

30V

Recovery Time  

35 ns

Nominal Vgs  

1.8 V

Height  

16.51mm

Length  

10.668mm

Width  

4.826mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free